Semiconductor packages

ABSTRACT

Semiconductor packages are provided. The semiconductor package includes a first redistribution layer structure, a photonic integrated circuit, an electronic integrated circuit, a waveguide and a memory. The photonic integrated circuit is disposed over and electrically connected to the first redistribution layer structure, and includes an optical transceiver and an optical coupler. The electronic integrated circuit is disposed over and electrically connected to the first redistribution layer structure. The waveguide is optically coupled to the optical coupler. The memory is electrically connected to the electronic integrated circuit.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the priority benefit of U.S. provisionalapplication Ser. No. 62/893,774, filed on Aug. 29, 2019. The entirety ofthe above-mentioned patent application is hereby incorporated byreference herein and made a part of this specification.

BACKGROUND

Optical signals are usable for high speed and secure data transmissionbetween two devices. In some applications, a device capable of opticaldata transmission includes at least an integrated circuit (IC or “chip”)having a laser die for transmitting and/or receiving optical signals.Also, the device usually has one or more other optical or electricalcomponents, a waveguide for the transmission of the optical signals, anda support, such as a substrate of a printed circuit board, on which thechip equipped with the laser die and the one or more other componentsare mounted. Various approaches for mounting a chip equipped with alaser die on a substrate have been studied.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1A to FIG. 1E are schematic cross-sectional views of a method offorming a semiconductor package in accordance with some embodiments.

FIG. 2 is another cross-sectional view an optical coupler of FIG. 1B.

FIG. 3 is a schematic cross-sectional view of a semiconductor package inaccordance with some embodiments.

FIG. 4A to FIG. 4F are schematic cross-sectional views of a method offorming a semiconductor package in accordance with some embodiments.

FIG. 5 is a top view of an optical coupler of FIG. 4B.

FIG. 6 is a schematic cross-sectional view of a semiconductor package inaccordance with some embodiments.

FIG. 7 is a schematic cross-sectional view of a semiconductor package inaccordance with some embodiments.

FIG. 8 is a schematic cross-sectional view of a semiconductor package inaccordance with some embodiments.

FIG. 9 is a schematic cross-sectional view of a semiconductor package inaccordance with some embodiments.

FIG. 10 is a schematic cross-sectional view of a semiconductor packagein accordance with some embodiments.

FIG. 11 is a schematic cross-sectional view of a semiconductor packagein accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

In addition, terms, such as “first,” “second,” “third,” “fourth,” andthe like, may be used herein for ease of description to describe similaror different element(s) or feature(s) as illustrated in the figures, andmay be used interchangeably depending on the order of the presence orthe contexts of the description.

Other features and processes may also be included. For example, testingstructures may be included to aid in the verification testing of the 3Dpackaging or 3DIC devices. The testing structures may include, forexample, test pads formed in a redistribution circuit structure or on asubstrate that allows the testing of the 3D packaging or 3DIC, the useof probes and/or probe cards, and the like. The verification testing maybe performed on intermediate structures as well as the final structure.Additionally, the structures and methods disclosed herein may be used inconjunction with testing methodologies that incorporate intermediateverification of known good dies to increase the yield and decreasecosts.

FIG. 1A to FIG. 1E are schematic cross-sectional views of a method offorming a semiconductor package in accordance with some embodiments.

Referring to FIG. 1A, a carrier C with a de-bonding layer DB coatedthereon is provided. In some embodiments, the carrier C may be a glasscarrier, a ceramic carrier, a metal carrier or any other carriersuitable for carrying a semiconductor wafer or a reconstituted wafer forthe manufacturing method of the semiconductor package. In someembodiments, the de-bonding layer DB may be any other material suitablefor bonding and debonding the carrier C from the above layers or waferdisposed thereon. The de-bonding layer DB includes, for example, alight-to-heat conversion (“LTHC”) layer, and such layer enablesdebonding from the carrier by applying laser irradiation. In somealternative embodiments, a buffer layer may be formed between thede-bonding layer DB and the carrier C. In some embodiments, a dielectriclayer DI is formed over the de-bonding layer DB. In some embodiments,the dielectric layer DI is, for example, polymer such as polyimide,benzocyclobutene (“BCB”), polybenzoxazole (“PBO”), or the like. In somealternative embodiments, the dielectric layer DI may include non-organicdielectric materials such as silicon oxide, silicon nitride, siliconcarbide, silicon oxynitride, or the like. However, the materials of thecarrier C, the de-bonding layer DB and the dielectric layer DI aremerely for illustration, and the disclosure is not limited thereto.

Then, a plurality of conductive posts 102 are provided over thedielectric layer DI. The conductive posts 102 may be copper pillars. Insome embodiments, the conductive posts 102 are separated from eachother, to define a first region 101 a for an electrical integratedcircuit and a second region 101 b for a photonic integrated circuit.That is, the electrical integrated circuit and the photonic integratedcircuit will be then disposed in the first region 101 a and the secondregion 101 b respectively. However, the disclosure is not limitedthereto.

Referring to FIG. 1B, an electrical integrated circuit 110 and aphotonic integrated circuit 120 are disposed between the conductiveposts 102 over the dielectric layer DI. For example, the electricalintegrated circuit 110 is picked and placed onto the dielectric layer DIin the first region 101 a, and the photonic integrated circuit 120 ispicked and placed onto the dielectric layer DI in the second region 101b. In some embodiments, a die attach film is located between theelectrical integrated circuit 110 and the dielectric layer DI foradhering the electrical integrated circuit 110 onto the dielectric layerDI. Similarly, a die attach film is located between the photonicintegrated circuit 120 and the dielectric layer DI for adhering thephotonic integrated circuit 120 onto the dielectric layer DI.

In some embodiments, the electrical integrated circuit 110 includes asubstrate 111, a conductive pad 112, passivation layers 113 a, 113 b, aconductive post 114 and a protection layer 115. The substrate 111includes an elementary semiconductor such as silicon or germanium and/ora compound semiconductor such as silicon germanium, silicon carbide,gallium arsenic, indium arsenide, gallium nitride or indium phosphide.In some embodiments, the substrate 111 is a semiconductor-on-insulator(SOI) substrate. In some alternative embodiments, the substrate 111 maytake the form of a planar substrate, a substrate with multiple fins,nanowires or any other form known to people having ordinary skill in theart. Depending on the requirements of design, the substrate 111 may be aP-type substrate or an N-type substrate and may have doped regionstherein. The doped regions may be configured for an N-type device or aP-type device.

The electrical integrated circuit 110 may include a device layer formedin or on the substrate 111. In some embodiments, the device layer mayinclude transistors, resistors, capacitors, inductors, and/or the like.The conductive pad 112 may be formed on and electrically connected tothe device layer and may be a pad of an interconnect structure. Theconductive pad 112 is an aluminum contact pad, for example. Thepassivation layers 113 a, 113 b may be sequentially formed on thesubstrate 111 and expose a portion of the conductive pad 112. In someembodiments, a material of the passivation layer 113 a is different forma material of the passivation layer 113 b. A material of the passivationlayer 113 a, 113 b may include silicon oxide, silicon oxynitride,silicon nitride, BCB, PBO, polyimide or a combination thereof. Theconductive post 114 is disposed on and electrically connected to theconductive pad 112. The conductive post 114 is a copper pillar or copperalloy pillar, for example. The protection layer 115 covers theconductive post 114 and the passivation layers 113 a, 113 b. In somealternative embodiments, before placing the electrical integratedcircuit 110 over the carrier C, the conductive post 114 is uncovered(i.e., bare dies not molded or encapsulated). A material of theprotection layer 115 may include silicon oxide, silicon nitride, siliconoxynitride, a low-k material, a photo-sensitive material such as asiloxane based inorganic-organic hybrid material, polyimide, acombination thereof, or the like.

In some embodiments, the photonic integrated circuit 120 includes asubstrate 121, the optical coupler OC and an optical transceiver OT. Thesubstrate 121 may be divided into two regions: anelectro-interconnection region 121 a and an optical region 121 b. Thesubstrate 121 includes silicon, silicon oxide, aluminum oxide, sapphire,germanium, silicon germanium, gallium arsenic, gallium nitride, indiumarsenide, indium phosphide or any other suitable material. In someembodiments, the substrate 121 may include an epitaxial layer. Forexample, the substrate 121 has an epitaxial layer overlying a bulksemiconductor. Further, the substrate 121 may be strained forperformance enhancement. The epitaxial layer may include a semiconductormaterial different from those of the bulk semiconductor such as a layerof silicon germanium overlying bulk silicon or a layer of siliconoverlying a bulk silicon germanium formed by a process includingselective epitaxial growth (SEG). Furthermore, the substrate 121 mayinclude a semiconductor-on-insulator (SOI) structure such as a burieddielectric layer. In one embodiment, the substrate 121 includes siliconwith (100) crystal orientation. The electro-connection region 121 aincludes a plurality of patterned dielectric layers and patternedconductive layers that provide interconnections (e.g., wiring) betweenthe various components, circuitry, and input/output of an IC device. Forexample, the electro-interconnection region 121 a includes a conductivepad 122 on the substrate 121, passivation layers 123 a, 123 b partiallycovering the substrate 121, a conductive post 124 and a protection layer125. The conductive pad 122, the passivation layers 123 a, 123 b, theconductive post 124 and the protection layer 125 may be similar to theconductive pad 112, the passivation layers 113 a, 113 b, the conductivepost 114 and the protection layer 115 respectively. In some embodiments,the optical transceiver OT is disposed in the optical region 121 b. Theoptical transceiver OT is embedded in the substrate 121, for example.The optical transceiver OT includes an optical receiver such as aphotodiode and an optical transmitter such as a laser diode.

FIG. 1B is a schematic cross-sectional view along a first line, and FIG.2 is another cross-sectional view along a second line which issubstantially perpendicular to the first line. Referring to FIGS. 1B and2, in some embodiments, the optical coupler OC is disposed in theoptical region 121 b. In some embodiments, the optical coupler OCincludes a plurality of waveguides 126, 127. The waveguide 126 may be asilicon waveguide, and the waveguide 127 may be a polymer waveguide. Thewaveguide 126 is formed over the substrate 121. In some embodiments, amaterial of the waveguide 126 is silicon, silicon oxynitride, polyimideor any other suitable material. A material of the waveguide 127 isdifferent from the material of the waveguide 126, and a material of thewaveguide 127 is a polymer material such as a photo-sensitive polymer.The photo-sensitive polymer may be a negative photo-sensitive polymer ora positive photo-sensitive polymer. In some embodiments, the waveguide126 is disposed adjacent to an edge of the substrate 121, for example.The waveguide 127 is disposed on the waveguide 126 and the passivationlayer 123 a, for example. As shown in FIG. 2, in some embodiments, thewaveguide 127 is partially disposed in the waveguide 126 and partiallycovered by the passivation layer 123 b, for example. In someembodiments, the waveguide 127 may be also referred to as a core layer.

Then, a waveguide WG is formed over the photonic integrated circuit 120to optically couple with the optical coupler OC. In some embodiments,the waveguide WG is formed at an edge of the photonic integrated circuit120. The waveguide WG is disposed on and in direct and physical contactwith the waveguide 127, for example. In some embodiments, the waveguideWG is an optical fiber. In some embodiments, the waveguide WG isextended beyond the optical coupler OC and protruded from the edge ofthe photonic integrated circuit 120. In some embodiments, edges of thewaveguide 126, the waveguide 127 and the substrate 121 are substantiallyaligned with one another, and the waveguide WG is extended beyond theedges of the waveguide 126, the waveguide 127 and the substrate 121. Insome embodiments, the protection layer 125 may be also referred to as acladding layer. In some embodiments, the waveguide WG is entirelyexposed. In some embodiments, an outer sidewall of the protection layer125 is substantially perpendicular to a surface of the substrate 121.However, the disclosure is not limited thereto. In some alternativeembodiments, the outer sidewall of the protection layer 125 is inclinedwith respect to a surface of the substrate 121.

Referring to FIG. 1C, an encapsulant 130 is formed over the carrier C toencapsulate the electrical integrated circuit 110, the photonicintegrated circuit 120 and the conductive posts 102. In someembodiments, the encapsulant 130 fills between or surrounds theelectrical integrated circuit 110, the photonic integrated circuit 120and the conductive posts 102. In some embodiments, a first surface 130 a(i.e., top surface) of the encapsulant 130 is substantially coplanarwith top surfaces of the electrical integrated circuit 110, the photonicintegrated circuit 120 and the conductive posts 102. In someembodiments, the first surface 130 a of the encapsulant 130 issubstantially flush with top surfaces of the conductive post 114 and theprotection layer 115 of the electrical integrated circuit 110, theconductive post 124 and the protection layer 125 of the photonicintegrated circuit 120 and the conductive posts 102. The encapsulant 130is formed by a molding process and a planarization process, for example.In some embodiments, as shown in FIG. 1B, the top surfaces of theelectrical integrated circuit 110, the photonic integrated circuit 120and the conductive posts 102 are illustrated as being substantiallycoplanar with each other before forming the encapsulant 130. However,the disclosure is not limited thereto. In some alternative embodiments,the top surfaces of the electrical integrated circuit 110, the photonicintegrated circuit 120 and the conductive posts 102 may be not flushwith each other before performing the planarization process. That is,the planarization process may remove portions of the conductive post114, the protection layer 115, the conductive post 124, the protectionlayer 125 and/or the conductive posts 102.

Then, a redistribution layer structure 140 is formed over the firstsurface 130 a of the encapsulant 130 to electrically connect to theelectrical integrated circuit 110, the photonic integrated circuit 120and the conductive posts 102. As shown in FIG. 1C, the waveguide WG isexposed without being covered by the redistribution layer structure 140.In some embodiments, the redistribution layer structure 140 includes aplurality of dielectric layers 142 and a plurality of conductivepatterns 144 in the dielectric layers 142. The conductive patterns 144are electrically connected to each other. The conductive patterns 144includes conductive lines, conductive vias or the like. In someembodiments, a material of the conductive patterns 144 includesaluminum, titanium, copper, nickel, tungsten, silver and/or alloysthereof. In some embodiments, a material of the dielectric layers 142includes silicon oxide, silicon oxynitride, silicon nitride, BCB, PBO,polyimide or a combination thereof. In some embodiments, the bottommostconductive patterns 144 of the redistribution layer structure 140 areelectrically connected to the conductive post 114 of the electricalintegrated circuit 110, the conductive post 124 of the photonicintegrated circuit 120 and the conductive posts 102 respectively.However, the disclosure is not limited thereto.

After that, a plurality of conductive terminals 146 are formed over andelectrically connected to the redistribution layer structure 140. Insome embodiments, the conductive terminals 146 are electricallyconnected to the electrical integrated circuit 110, the photonicintegrated circuit 120 and the conductive posts 102 through theredistribution layer structure 140. In some embodiments, the conductiveterminals 146 are, for example, solder balls or ball grid array (“BGA”)balls. In some embodiments, the conductive terminals 146 may be placedon the conductive patterns 144 (e.g., under-ball metallurgy patterns)through a ball placement process or any other suitable process.

Referring to FIG. 1D, the dielectric layer DI is de-bonded from thede-bonding layer DB such that the structure of FIG. 1C is separated fromthe carrier C. That is, the carrier C is removed. In some embodiments,the de-bonding layer DB (e.g., the LTHC release layer) may be irradiatedby an UV laser such that the dielectric layer DI adhered on a secondsurface 130 b (i.e., bottom surface) of the encapsulant 130 is peeledfrom the carrier C. Then, the formed structure is turned upside down anddisposed on a frame F. As illustrated in FIG. 1D, the dielectric layerDI is then patterned such that a plurality of contact openings O areformed to partially expose the conductive posts 102. The number of thecontact openings O corresponds to the number of the conductive posts102. In some embodiments, the contact openings O of the dielectric layerDI are formed by a laser drilling process, a mechanical drilling processor any other suitable process.

Then, a memory 160 is disposed on and electrically connected to theconductive posts 102. In some embodiments, the memory 160 is disposedover the second surface 130 b of the encapsulant 130. In someembodiments, the memory 160 is electrically connected to the conductiveposts 102 through a plurality of conductive terminals 162 such asmicro-bumps therebeneath. In some embodiments, the memory 160 includes asubstrate 161, a first die 163 on the substrate 161, a second die 164stacked on the first die 163 and an encapsulant 165 encapsulating thefirst die 163 and the second die 164. The substrate 161, the first die163 and the second die 164 respectively have a plurality of conductivepads 161 a, 163 a, 164 a, for example. The conductive terminals 162 areelectrically connected to the conductive pads 161 a. In someembodiments, the memory 160 further includes a plurality of conductivewires 166 encapsulated by the encapsulant 165. The conductive wires 166are formed between the conductive pads 161 a of the substrate 161 andthe conductive pads 163 a of the first die 163, to electrically connectthe substrate 161 and the first die 163. Similarly, the conductive wires166 are formed between the conductive pads 161 a of the substrate 161and the conductive pads 164 a of the second die 164, to electricallyconnect the substrate 161 and the second die 164.

Referring to FIG. 1E, the structure in FIG. 1D is de-bonded from theframe F, and a semiconductor package 100 is formed. In some embodiments,the semiconductor package 100 includes a unit U1 and the waveguide WGoptically coupled to the unit U1. In some embodiments, the unit U1includes the electrical integrated circuit 110, the photonic integratedcircuit 120 and the memory 160. In some embodiments, as shown in FIG. 3,the unit U1 of the FIG. 1E may be connected to another unit U2 by thewaveguide WG therebetween, so as to form a semiconductor package 10. Insome embodiments, the unit U2 has a configuration similar to the unitU1. However, the disclosure is not limited thereto. In some alternativeembodiments, the units U1, U2 may have different configuration.

FIG. 4A to FIG. 4F are schematic cross-sectional views of a method offorming a semiconductor package in accordance with some embodiments.Referring to FIG. 4A, a redistribution layer structure 140 is formedover a carrier C, and a plurality of conductive posts 102 are formed onthe redistribution layer structure 140. In some embodiments, ade-bonding layer DB and a dielectric layer DI are sequentially formed onthe carrier C, and the redistribution layer structure 140 is formed onthe dielectric layer DI. In some embodiments, the redistribution layerstructure 140 is a back-side redistribution layer structure. Theredistribution layer structure 140 includes a plurality of dielectriclayers 142 and a plurality of conductive patterns 144 in the dielectriclayers 142. The conductive patterns 144 are electrically connected toeach other. The conductive posts 102 are electrically connected to theuppermost conductive patterns 144 of the redistribution layer structure140. In some embodiments, two conductive posts 102 are disposedimmediately adjacent to each other, to define a first region 101 a foran electrical integrated circuit and a second region 101 b for aphotonic integrated circuit. That is, the electrical integrated circuitand the photonic integrated circuit will be then disposed in the firstregion 101 a and the second region 101 b respectively. However, thedisclosure is not limited thereto. In some alternative embodiments, oneconductive post or more than two conductive posts may be disposed toseparate the first region 101 a and the second region 101 b. Materialsand/or forming methods of the carrier C, the conductive posts 102 andthe redistribution layer structure 140 may be similar to orsubstantially the same as those of the carrier C, the conductive posts102 and the redistribution layer structure 140 described above, and thusdetails are omitted herein.

Referring to FIG. 4B, then, an electrical integrated circuit 110 and aphotonic integrated circuit 120 are disposed on the redistribution layerstructure 140. For example, the electrical integrated circuit 110 ispicked and placed onto the dielectric layer DI in the first region 101a, and the photonic integrated circuit 120 is picked and placed onto thedielectric layer DI in the second region 101 b. In some embodiments, thephotonic integrated circuit 120 includes a substrate 121 including anelectro-interconnection region 121 a and an optical region 121 b, aconductive pad 122 and a conductive post 124 in theelectro-interconnection region 121 a and an optical transceiver OT andan optical coupler OC in the optical region 121 b. In some embodiments,the photonic integrated circuit 120 further includes a passivation layer123 is disposed on the substrate 121, and the conductive pad 122, theconductive post 124 and the optical coupler OC are disposed in thepassivation layer 123. The passivation layer 123 may be a single layeredor multiple layered structure. In some embodiments, the electricalintegrated circuit 110 and the photonic integrated circuit 120 may besimilar to the electrical integrated circuit 110 and the photonicintegrated circuit 120 of FIG. 1E, and the main difference is describedbelow.

FIG. 5 is a top view of an optical coupler of FIG. 4B. Referring toFIGS. 4B and 5, the optical coupler OC includes a waveguide 126 and agrating 128, for example. In some embodiments, the waveguide 126 may bea silicon waveguide, and the grating 128 may be a metal grating. Amaterial of the waveguide 126 may be silicon nitride. The grating 128may be formed directly on the waveguide 126 or have some spacingtherebetween. In some embodiments, the grating 128 changes the directionof an incident optical signal light, and the waveguide 126 guides theoptical signal light towards the optical transceiver OT. The electricalsignal generated by the optical transceiver OT from the optical signalcan be sent through the electro-connection region 121 a interconnectedto a desired part of the photonic integrated circuit 120. A material ofthe grating 128 may be copper, aluminum or any other suitable material.In some embodiments, as shown in FIG. 5, the waveguide 126 and thegrating 128 have a triangular shape for coupling the optical signal onthe wide right side that narrows towards the left side. In somealternative embodiments, the waveguide 126 and the grating 128 may haveany other suitable shape.

Then, a waveguide WG is formed over the photonic integrated circuit 120to optically couple with the optical coupler OC. In some embodiments,the waveguide WG is formed at an edge of the photonic integrated circuit120. The waveguide WG is disposed on and in direct and physical contactwith the grating 128, for example. In some embodiments, the waveguide WGis an optical fiber. In some embodiments, the waveguide WG is extendedbeyond the optical coupler OC and protruded from the edge of thephotonic integrated circuit 120. For example, the waveguide WG isextended beyond the edges of the passivation layer 123 and the substrate121.

Referring to FIG. 4C, an encapsulant 130 is formed over the carrier C toencapsulate the electrical integrated circuit 110, the photonicintegrated circuit 120 and the conductive posts 102. In someembodiments, the encapsulant 130 fills between or surrounds theelectrical integrated circuit 110, the photonic integrated circuit 120and the conductive posts 102. A first surface 130 a (i.e., top surface)of the encapsulant 130 is substantially coplanar with top surfaces ofthe electrical integrated circuit 110, the photonic integrated circuit120 and the conductive posts 102. In some embodiments, the first surface130 a of the encapsulant 130 is substantially flush with top surfaces ofthe conductive post 114 and the protection layer 115 of the electricalintegrated circuit 110, the conductive post 124, the protection layer125 and the grating 128 of the photonic integrated circuit 120 and theconductive posts 102.

Then, a redistribution layer structure 150 is formed over the firstsurface 130 a of the encapsulant 130 to electrically connect to theelectrical integrated circuit 110, the photonic integrated circuit 120and the conductive posts 102. In some embodiments, the redistributionlayer structure 150 is separated from the waveguide WG. That is, ahorizontal distance is formed between the redistribution layer structure150 and the waveguide WG. In some embodiments, the redistribution layerstructure 150 includes a plurality of dielectric layers 152 and aplurality of conductive patterns 154 in the dielectric layers 152. Theconductive patterns 154 are electrically connected to each other. Theconductive patterns 154 includes conductive lines, conductive vias orthe like. In some embodiments, a material of the conductive patterns 154includes aluminum, titanium, copper, nickel, tungsten, silver and/oralloys thereof. In some embodiments, a material of the dielectric layer152 includes silicon oxide, silicon oxynitride, silicon nitride, BCB,PBO, polyimide or a combination thereof. In some embodiments, thebottommost conductive patterns 154 of the redistribution layer structure150 are electrically connected to the conductive post 114 of theelectrical integrated circuit 110, the conductive post 124 of thephotonic integrated circuit 120 and the conductive posts 102respectively. However, the disclosure is not limited thereto. In someembodiments, an outer sidewall of the redistribution layer structure 150is substantially flush with a sidewall of the encapsulant 130. However,the disclosure is not limited thereto.

Referring to FIG. 4D, the dielectric layer DI is de-bonded from thede-bonding layer DB such that the structure of FIG. 4C is separated fromthe carrier C. That is, the carrier C is removed. Then, the formedstructure is turned upside down and disposed on a frame F1. In someembodiments, the de-bonding layer DB (e.g., the LTHC release layer) maybe irradiated by an UV laser such that the dielectric layer DI adheredon a second surface 130 b (i.e., bottom surface) of the encapsulant 130is peeled from the carrier C. After that, the dielectric layer DI isthen patterned such that a plurality of contact openings O are formed topartially expose some of the conductive patterns 144. Then, a pluralityof conductive terminals 146 are formed over and electrically connectedto the redistribution layer structure 140. In some embodiments, theconductive terminals 146 are electrically connected to the electricalintegrated circuit 110, the photonic integrated circuit 120 and theconductive posts 102 through the redistribution layer structure 140. Insome embodiments, the conductive terminals 146 are, for example, solderballs or ball grid array (“BGA”) balls.

Referring to FIG. 4E, the structure of FIG. 4D is de-bonded from theframe F1, and is turned upside down and disposed on a frame F2. Then, amemory 160 is disposed on and electrically connected to theredistribution layer structure 150. In some embodiments, the memory 160is joined onto the redistribution layer structure 150 through aplurality of conductive terminals 162 and an underfill 168. Theconductive terminals 162 are disposed on a surface of the memory 160 andelectrically connected to a plurality of conductive pads 160 a of thememory 160. After bonding, the conductive terminals 162 are electricallyconnected to the conductive patterns 154 of the redistribution layerstructure 150. The underfill 168 is dispensed aside the conductiveterminals 162 to protect the electrical connection between theconductive terminals 162 of the memory 160 and the conductive patterns154 of the redistribution layer structure 150 and securely adhere thememory 160 onto the redistribution layer structure 150.

Referring to FIG. 4F, the structure in FIG. 4E is de-bonded from theframe F2, and a semiconductor package 100 is formed. In someembodiments, the semiconductor package 100 includes a unit U1 and thewaveguide WG optically coupled to the unit U1. In some embodiments, theunit U1 includes the electrical integrated circuit 110, the photonicintegrated circuit 120 and the memory 160. In some embodiments, as shownin FIG. 6, the unit U1 of the FIG. 4F may be connected to another unitU2 by the waveguide WG therebetween, so as to form a semiconductorpackage 10. In some embodiments, the unit U2 has a configuration similarto the unit U1. However, the disclosure is not limited thereto. In somealternative embodiments, the units U1, U2 may have differentconfiguration.

FIG. 7 is a schematic cross-sectional view of a semiconductor package inaccordance with some embodiments. The semiconductor package of FIG. 7may be similar to the semiconductor package of FIG. 3, and thus the samereference numerals are used to refer to the same and liked parts, andits detailed description will be omitted herein. The difference isillustrated in details below.

Referring to FIG. 7, a semiconductor package 10 includes a plurality ofunits U1, U2 and a waveguide WG between the units U1, U2. In someembodiments, the unit U1, U2 includes a redistribution layer structure140, an electrical integrated circuit 110, a photonic integrated circuit120, a plurality of memories 160 and an encapsulant 130. In someembodiments, the electrical integrated circuit 110, the photonicintegrated circuit 120 and the memories 160 are disposed on a first sideof the redistribution layer structure 140 and encapsulated by theencapsulant 130. The electrical integrated circuit 110 and the photonicintegrated circuit 120 are disposed side by side in a first direction D1(e.g., horizontal direction). The memories 160 are stacked on theelectrical integrated circuit 110 in a second direction D2 (e.g.,vertical direction) substantially perpendicular to the first directionD1, for example. In some embodiments, the memories 160 and theelectrical integrated circuit 110 are stacked vertically andelectrically connected by conductive terminals 162 such as micro-bumps.In some embodiments, a plurality of conductive posts 102 are disposedbetween the photonic integrated circuit 120 and the electricalintegrated circuit 110 and between the photonic integrated circuit 120and the memory 160. The conductive posts 102 penetrate the encapsulant130. In some embodiments, the redistribution layer structure 140includes a plurality of dielectric layers 142 and a plurality ofconductive patterns 144 in the dielectric layers 142. A plurality ofconductive terminals 146 are disposed on a second side opposite to thefirst side of the redistribution layer structure 140 and electricallyconnected to the redistribution layer structure 140. By theredistribution layer structure 140, the electrical integrated circuit110 and the photonic integrated circuit 120 are electrically connected.The configurations of the electrical integrated circuit 110 and thephotonic integrated circuit 120 may be similar to or substantially thesame as the configurations of the electrical integrated circuit 110 andthe photonic integrated circuit 120 of FIG. 1E or FIG. 4F, and thus thedetails are omitted herein. However, the electrical integrated circuit110 and the photonic integrated circuit 120 may have any other suitableconfiguration.

In some embodiments, the unit U1, U2 are disposed side by side andseparated from each other. In some embodiments, the waveguide WG isoptically coupled to optical transceivers OT of the photonic integratedcircuits 120 respectively, so as to connect the units U1, U2. In someembodiments, the waveguide WG is disposed between and on the opticaltransceivers OT over the encapsulants 130, for example.

FIG. 8 is a schematic cross-sectional view of a semiconductor package inaccordance with some embodiments. The semiconductor package of FIG. 7may be similar to the semiconductor package of FIG. 3, and thus the samereference numerals are used to refer to the same and liked parts, andits detailed description will be omitted herein. The difference isillustrated in details below.

Referring to FIG. 8, a semiconductor package 10 includes a plurality ofunits U1, U2 and a waveguide WG between the units U1, U2. In someembodiments, the unit U1, U2 includes a redistribution layer structure140, an electrical integrated circuit 110, a photonic integrated circuit120, a memory 160 and an encapsulant 130. In some embodiments, theelectrical integrated circuit 110, the photonic integrated circuit 120and the memory 160 are disposed side by side in a first direction D1(e.g., horizontal direction) on the redistribution layer structure 140and encapsulated by the encapsulant 130. In some alternativeembodiments, the electrical integrated circuit 110 is disposed betweenthe photonic integrated circuit 120 and the memory 160. However, thedisclosure is not limited thereto. In some alternative embodiments, thephotonic integrated circuit 120 is disposed between the electricalintegrated circuit 110 and the memory 160, or the memory 160 is disposedbetween the electrical integrated circuit 110 and the photonicintegrated circuit 120. In some embodiments, a plurality of conductiveposts 102 are disposed between the photonic integrated circuit 120 andthe electrical integrated circuit 110 and between the electricalintegrated circuit 110 and the memory 160. The conductive posts 102penetrate the encapsulant 130. The configurations of the electricalintegrated circuit 110 and the photonic integrated circuit 120 may besimilar to or substantially the same as the configurations of theelectrical integrated circuit 110 and the photonic integrated circuit120 of FIG. 1E or FIG. 4F, and thus the details are omitted herein.However, the electrical integrated circuit 110 and the photonicintegrated circuit 120 may have any other suitable configuration.

In some embodiments, the units U1, U2 are bonded to each other in a faceto face configuration. After bonding, the unit U2 is disposed on theunit U1 in a second direction D2 (e.g., vertical direction)substantially perpendicular to the first direction D1. In someembodiments, the electrical integrated circuits 110, the photonicintegrated circuits 120 and the memories 160 are disposed between theredistribution layer structures 140. In some embodiments, the waveguideWG is disposed in a dielectric layer 170 on the unit U1, and the unit U2is disposed on the waveguide WG and the dielectric layer 170. In someembodiments, the waveguide WG is optically coupled to opticaltransceivers OT of the units U1, U2 respectively, so as to connect theunits U1, U2. In some embodiments, a plurality of conductive vias 172are further formed in the dielectric layer 170 to electrically connectthe conductive posts 102 of the units U1, U2. In some embodiments, aplurality of conductive terminals 146 are disposed under theredistribution layer structure 140 of the unit U1. However, thedisclosure is not limited thereto.

In some embodiments, the optical transceiver OT of the unit U2 ispartially overlapped with the optical transceiver OT of the unit U1 inthe second direction D2. For example, the optical transceiver OT of theunit U2 is disposed directly on the optical transceiver OT of the unitU1. However, the disclosure is not limited thereto. In some alternativeembodiments, as shown in FIG. 9, the optical transceiver OT of the unitU2 is not overlapped with the optical transceiver OT of the unit U1 inthe second direction D2. For example, the photonic integrated circuit120 of the unit U2 is disposed above the electrical integrated circuit110 of the unit U1. The memory 160 of the unit U2 is disposed above theelectrical integrated circuit 110 of the unit U1. The electricalintegrated circuit 110 of the unit U2 is disposed above the memory 160of the unit U1. In other words, the optical transceivers OT of the unitsU1, U2 are disposed offset from each other. In some embodiments, thewaveguide WG is extended between the optical transceivers OT of theunits U1, U2 in the first direction D1 (e.g., horizontal direction)substantially perpendicular to the second direction D2, to opticallycouple the optical transceivers OT respectively, so as to connect theunits U1, U2.

FIG. 10 is a schematic cross-sectional view of a semiconductor packagein accordance with some embodiments. The elements of the semiconductorpackage 100 of FIG. 10 may be similar to the elements of thesemiconductor package 100 of FIG. 1E, and thus the same referencenumerals are used to refer to the same and liked parts, and its detaileddescription will be omitted herein. The difference is illustrated indetails below.

In some embodiments, the semiconductor package 100 includes a pluralityof electrical integrated circuits 110, a plurality of memories 160, aphotonic integrated circuit 120, a waveguide WG, a redistribution layerstructure 140 and an encapsulant 130. In some embodiments, the memories160 and the photonic integrated circuit 120 are disposed side by side,and the photonic integrated circuit 120 is disposed between theelectrical integrated circuits 110. In some embodiments, the electricalintegrated circuits 110 are disposed over and electrically connected tothe memories 160, respectively. In some embodiments, the electricalintegrated circuits 110 are electrically connected to an opticaltransceiver OT of the photonic integrated circuit 120. For example,conductive pads 112 of the electrical integrated circuits 110 areelectrically connected to conductive pads 122 of the photonic integratedcircuit 120, and the conductive pads 122 are electrically connected toconductive pads 180 of the optical transceiver OT by connective patterns182. The waveguide WG is optically coupled to the optical transceiverOT. In some embodiments, the electrical integrated circuits 110, thephotonic integrated circuit 120, the memories 160 and the waveguide WGare disposed over a first side of the redistribution layer structure 140and encapsulated by the encapsulant 130. In some embodiments, aplurality of conductive posts 102 are disposed between and electricallyconnected to the electrical integrated circuit 110 and theredistribution layer structure 140. The conductive posts 102 penetratethe encapsulant 130. In some embodiments, a plurality of conductiveterminals 146 are disposed on a second side opposite to the first sideof the redistribution layer structure 140. In some embodiments, by thephotonic integrated circuit 120, a plurality of the electricalintegrated circuits 110 are connected. Furthermore, the semiconductorpackage 100 may be connected to another semiconductor package throughthe waveguide WG. The configurations of the electrical integratedcircuit 110 and the photonic integrated circuit 120 may be similar to orsubstantially the same as the configurations of the electricalintegrated circuit 110 and the photonic integrated circuit 120 of FIG.1E or FIG. 4F, and thus the details are omitted herein. However, theelectrical integrated circuit 110 and the photonic integrated circuit120 may have any other suitable configuration.

In some embodiments, as shown in FIG. 11, a plurality of units U arearranged in an array on a wafer W, and the units U are connected to eachother by a waveguide (not shown) therebetween. The wafer is asemiconductor wafer, a reconstituted wafer or any other suitable waferfor carrying the semiconductor package. The units U may include anelectrical integrated circuit 110, a photonic integrated circuit 120 anda memory 160. In some embodiments, the unit U and the waveguide may besimilar to the unit U1 and the waveguide WG of FIGS. 1E, 4F, 7, 8, 9 or10. However, the disclosure is not limited thereto. In some alternativeembodiments, the units U and the waveguide may have any other suitableconfiguration. Further, in some alternative embodiments, the units U maybe horizontally arranged in an array, and further vertically stacked onone another. Accordingly, one system packaged on one wafer may beachieved.

In some embodiments, by using integrated fan-out (InFO) technique andthe waveguide, optical interconnection between the photonic integratedcircuit and the electrical integrated circuit are realized. Accordingly,ultra-speed signal transmission may be obtained, and the semiconductorpackage may be applied in multi-core high performance computing (HPC)applications. In addition, multiple dies such as the photonic integratedcircuit, the electrical integrated circuit and the memory may be easilyintegrated without using an interposer. Conventionally, the interposerincludes semiconductor materials such as silicon, and thus using theinterposer increases the cost of manufacturing the semiconductorpackage. Accordingly, a form factor (or a thickness) of thesemiconductor package and/or a cost for manufacturing the semiconductorpackage may become reduced.

According to some embodiments, a semiconductor package includes a firstredistribution layer structure, a photonic integrated circuit, anelectronic integrated circuit, a waveguide and a memory. The photonicintegrated circuit is disposed over and electrically connected to thefirst redistribution layer structure, and includes an opticaltransceiver and an optical coupler. The electronic integrated circuit isdisposed over and electrically connected to the first redistributionlayer structure. The waveguide is optically coupled to the opticalcoupler. The memory is electrically connected to the electronicintegrated circuit.

According to some embodiments, a semiconductor package includes a firstunit, a second unit and a waveguide. The first unit includes a firstphotonic integrated circuit, a first electronic integrated circuit and afirst memory electrically connected to each other, and the firstphotonic integrated circuit includes a first optical transceiver. Thesecond unit includes a second photonic integrated circuit, a secondelectronic integrated circuit and a second memory electrically connectedto each other, and the second photonic integrated circuit includes asecond optical transceiver. The waveguide is disposed between andoptically coupled to the first optical transceiver and the secondoptical transceiver.

According to some embodiments, a semiconductor package includes aredistribution layer structure, a plurality of memories, a photonicintegrated circuit, a plurality of electronic integrated circuits and awaveguide. The memories are disposed over and electrically connected tothe redistribution layer structure. The photonic integrated circuitincludes an optical transceiver and is disposed between the memorydevices over the redistribution layer structure. The electronicintegrated circuits are respectively disposed over and electricallyconnected to the memories and the photonic integrated circuit. Thewaveguide is disposed between the electronic integrated circuits andoptically coupled to the optical transceiver.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor package, comprising: a firstredistribution layer structure; a photonic integrated circuit, disposedover and electrically connected to the first redistribution layerstructure, comprising an optical transceiver and an optical coupler; anelectronic integrated circuit, disposed over and electrically connectedto the first redistribution layer structure; a waveguide, opticallycoupled to the optical coupler, wherein the waveguide is disposed at anedge of the photonic integrated circuit and protruding from the edge ofthe photonic integrated circuit; and a memory, electrically connected tothe electronic integrated circuit.
 2. The semiconductor package asclaimed in claim 1, wherein the optical coupler is disposed between theoptical transceiver and the waveguide.
 3. The semiconductor package asclaimed in claim 1, further comprising a second redistribution layerstructure disposed between and electrically connected to the electronicintegrated circuit and the memory.
 4. The semiconductor package asclaimed in claim 1, further comprising an encapsulant encapsulating thephotonic integrated circuit and the electronic integrated circuit. 5.The semiconductor package as claimed in claim 1, wherein the opticalcoupler comprises a silicon waveguide and a polymer waveguide betweenthe silicon waveguide and the waveguide.
 6. The semiconductor package asclaimed in claim 1, wherein the optical coupler comprises a siliconwaveguide and a grating between the silicon waveguide and the waveguide.7. The semiconductor package as claimed in claim 1, wherein thewaveguide includes an optical fiber.
 8. A semiconductor package,comprising: a first unit, comprising a first photonic integratedcircuit, a first electronic integrated circuit and a first memoryelectrically connected to each other, the first photonic integratedcircuit comprising a first optical transceiver; a second unit,comprising a second photonic integrated circuit, a second electronicintegrated circuit and a second memory electrically connected to eachother, the second photonic integrated circuit comprising a secondoptical transceiver; and a waveguide, disposed between and opticallycoupled to the first optical transceiver and the second opticaltransceiver.
 9. The semiconductor package as claimed in claim 8, whereinthe first photonic integrated circuit and the first electronicintegrated circuit are disposed side by side in a first direction, andthe first memory is stacked on the first electronic integrated circuitin a second direction substantially perpendicular to the firstdirection.
 10. The semiconductor package as claimed in claim 8, whereinthe first unit and the second unit are disposed side by side in a firstdirection, and the waveguide is stacked on the first unit and the secondunit in a second direction substantially perpendicular to the firstdirection.
 11. The semiconductor package as claimed in claim 8, whereinthe first unit further comprises a first encapsulant encapsulating thefirst photonic integrated circuit, the first electronic integratedcircuit and the first memory, the second unit further comprises a secondencapsulant encapsulating the second photonic integrated circuit, thesecond electronic integrated circuit and the second memory, and thewaveguide is disposed over the first encapsulant and the secondencapsulant.
 12. The semiconductor package as claimed in claim 8,wherein the second photonic integrated circuit is partially overlappedwith the first photonic integrated circuit.
 13. The semiconductorpackage as claimed in claim 8, wherein the waveguide is extended in afirst direction between the first optical transceiver and the secondoptical transceiver, and the first optical transceiver and the secondoptical transceiver are not overlapped in a second directionsubstantially perpendicular to the first direction.
 14. Thesemiconductor package as claimed in claim 8, further comprising a firstredistribution layer structure electrically connected to the first unitand a second redistribution layer structure electrically connected tothe second unit, wherein the first unit and the second unit are disposedbetween the first redistribution layer structure and the secondredistribution layer structure.
 15. The semiconductor package as claimedin claim 8, wherein the first photonic integrated circuit, the firstelectronic integrated circuit and the first memory of the first unit aredisposed side by side in a first direction, and the second unit isdisposed on the first unit in a second direction substantiallyperpendicular to the first direction.
 16. A semiconductor package,comprising: a redistribution layer structure; a plurality of memories,disposed over and electrically connected to the redistribution layerstructure; a photonic integrated circuit comprising an opticaltransceiver, disposed between the memory devices over the redistributionlayer structure; a plurality of electronic integrated circuits,respectively disposed over and electrically connected to the memoriesand the photonic integrated circuit; and a waveguide, disposed betweenthe electronic integrated circuits and optically coupled to the opticaltransceiver.
 17. The semiconductor package as claimed in claim 16,wherein the optical transceiver is electrically connected to theelectronic integrated circuits.
 18. The semiconductor package as claimedin claim 16, further comprising an encapsulant encapsulating theelectronic integrated circuits, the memory devices, the shared photonicintegrated circuit and the waveguide.
 19. The semiconductor package asclaimed ill claim 16, further comprising a plurality of conductive poststo electrically connect the electronic integrated circuits and theredistribution layer structure.
 20. The semiconductor package as claimedin claim 1, wherein the electronic integrated circuit is disposedbetween the first redistribution layer structure and the memory.